Low temperature photoluminescence properties of Zn-doped GaAs
نویسندگان
چکیده
منابع مشابه
A photoluminescence study of δ-doped GaAs
Samples of GaAs 8-doped with beryllium have been studied with photoluminescence. With a lightly doped sample, (2 x 1016 Be atoms per m2) a spectral feature is observed which can be interpreted as caused by radiative recombinations between spatially non-confined conductionband electrons and acceptor-related holes forming a miniband system confined spatially to the &doped region. With higher dens...
متن کاملThe Effect of Annealing, Synthesis Temperature and Structure on Photoluminescence Properties of Eu-Doped ZnO Nanorods
In this study un-doped and Eu-doped ZnO nanorods and microrads were fabricated by Chemical Vapor Deposition (CVD) method. The effects of annealing, synthesis temperature and structure on structural and photoluminescence properties of Eu-doped ZnO samples were studied in detail. Prepared samples were characterized using X-Ray diffraction (XRD), scanning electron microscopy (SEM), particle size a...
متن کاملPhotoluminescence from low temperature grown InAs/GaAs quantum dots
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...
متن کاملElectrical and structural properties of Be- and Si-doped low-temperature-grown GaAs
Excess As is incorporated in GaAs grown at low substrate temperatures by molecular beam epitaxy. Excess As is distributed in the epilayer as defects and the material exhibits considerable strain. When annealed to moderate temperatures, the strain is seen to disappear and the excess As is now in the form of semimetallic clusters. It has been proposed that these As clusters form buried Schottky b...
متن کاملImplant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature
The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was studied using H, Li, C, and O ion implantation. The ion mass did not play a significant role in the stability of isolation, and a similar activation energy of ;(0.6360.03 eV) was obtained for isolation using either H or O ions. Furthermore, the isolation was stable against isochronal annealing u...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials Science and Engineering: B
سال: 1998
ISSN: 0921-5107
DOI: 10.1016/s0921-5107(98)00259-1