Low temperature growth of epitaxial ferroelectric BaTiO3

High ferroelectric polarization in c-oriented BaTiO3 epitaxial thin films on SrTiO3/Si(001)

Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain Dep. de Fisica, Universitat Autònoma de Barcelona, Campus UAB, Bellaterra 08193, Barcelona, Spain Institut des Nanotechnologies de Lyon (INL), UMR CNRS 5270, Ecole Centrale de Lyon, 36 avenue Guy de Collongues, 69134 Ecully Cedex, France Materials Science and Technology Division, Oak Ridge...

Anisotropy of domain growth in epitaxial ferroelectric capacitors

Inverse barocaloric effects in ferroelectric BaTiO3 ceramics

Periodic Slab LAPW Computations for Ferroelectric BaTiO3

Linearized augmented plane wave (LAPW) calculations are performed for periodic (001) and (111) slabs of BaTiO3 to understand the effects of surfaces on ferroelectric BaTiO3. The (111) slab is found to be much less stable than the (001) slab. The average surface energies are respectively 3700 erg/cm and 1600 erg/cm. The depolarization field is sufficiently large in the ideal unrelaxated slab to ...

Low temperature synthesis and characterization of lanthanide-doped BaTiO3 nanocrystals.

The vapor diffusion sol-gel (VDSG) method was employed for the room-temperature synthesis of ~10 nm, aliovalently doped 0.4, 0.8, and 1.6 mol% La:BaTiO3 and 0.4, 0.6, and 1.2 mol% Dy:BaTiO3 nanocrystals. Maximum ensemble relative permittivities of 176 and 208 were observed in the 0.8 mol% La:BaTiO3 and the 1.2 mol% Dy:BaTiO3 nanocrystals, respectively, relative to 89 for undoped BaTiO3 (at 1 MH...