منابع مشابه
Design of Low Power Sram Memory Using 8t Sram Cell
Low power design has become the major challenge of present chip designs as leakage power has been rising with scaling of technologies. As modern technology is spreading fast, it is very important to design low power, high performance, and fast responding SRAM (Static Random Access Memory) since they are critical component in high performance processors. The Conventional 6T SRAM cell is very muc...
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This paper presents a fast and low-power Static Random Access Memory (SRAM) design. SRAM are widely used in computer systems and many portable devices. Proposed SRAM is faster because of precharging at a desired voltage. For the most recent CMOS technologies leakage power dissipation has become a major concern. According to the International Technology Roadmap for Semiconductors (ITRS), leakage...
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Permanent magnet and wound rotor synchronous machines (PMSMs and WRSMs) are often used in diesel enginebased portable power generation systems. In these applications, there is a growing desire to improve machine efficiency in order to reduce fossil fuel requirements. In addition, there is a desire to reduce mass to improve mobility. To attempt to address these competing performance objectives, ...
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We present a novel half-select disturb free transistor SRAM cell. The cell is 6T based and utilizes decoupling logic. It employs gated inverter SRAM cells to decouple the column select read disturb scenario in half-selected columns which is one of the impediments to lowering cell voltage. Furthermore, “false read” before write operation, common to conventional 6T designs due to bit-select and w...
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In this paper we propose a novel design of a low power static random access memory (SRAM) cell for high-speed operations. The model adopts the voltage mode method for reducing the voltage swing during the write operation switching activity. Dynamic power dissipation increases when the operating frequency of the SRAM cell increases. In the proposed design we use two voltage sources connected wit...
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ژورنال
عنوان ژورنال: International Journal of Research in Engineering and Technology
سال: 2013
ISSN: 2321-7308,2319-1163
DOI: 10.15623/ijret.2013.0203009