منابع مشابه
Parametric Performance Analysis of 2-GHz Low Noise Amplifier
In this paper designed, implemented and simulated LNA is divided into two parts. In the first part, LNA is based on lumped elements and in second part LNA is based on distributed elements. Two designed methods have been compared and best performance is obtained with lumped elements. The designed amplifier provides a noise figure of 0.358 dB , gain of 16.778 dB, input return loss is -4.917dB and...
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We have obtained parametric gain at 19 GHz from a distributed Josephson junction parametric amplifier whose active gain medium consists of a series array of 1000 Josephson junctions embedded in a coplanar waveguide. When cooled to 1.7 K the amplifier provides 16 dB gain in a mode where the internally generated double sideband noise referred to input is 0.560.1 K. This noise is consistent with N...
متن کاملLow Noise Amplifier Circuit
By Aalay Kapadia in Electrical Engineering and Electronic Engineering. The circuit topology we used for this project is a cascode LNA with inductive source. Typical parameters are maximum transducer gain, output power , low noise, circuit stability. Here a LNA is designed to obtain an optimum gain with minimum.
متن کاملA Concurrent Dual-Band Low Noise Amplifier for GNSS Receivers
In this paper, a new design of concurrent dual-band Low Noise Amplifier (LNA) for multi-band single-channel Global Navigation Satellite System (GNSS) receivers is proposed. This new structure is able to operate concurrently at frequency of 1.2 and 1.57 GHz. Parallel and series resonance parts are employed in the input matching in order to achieve concurrent performance. With respect to used pse...
متن کاملA Broadband Low-Noise-Amplifier
This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0.5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB...
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ژورنال
عنوان ژورنال: IEEE Transactions on Circuits and Systems I: Regular Papers
سال: 2011
ISSN: 1549-8328,1558-0806
DOI: 10.1109/tcsi.2010.2072370