Low-energy Se ion implantation in MoS2 monolayers

نویسندگان

چکیده

Abstract In this work, we study ultra-low energy implantation into MoS 2 monolayers to evaluate the potential of technique in two-dimensional materials technology. We use 80 Se + ions at 20 eV and with fluences up 5.0·10 14 cm −2 . Raman spectra implanted films show that are predominantly incorporated sulfur sites 2−2 x alloys formed, indicating high ion retention rates, agreement predictions molecular dynamics simulations irradiation on monolayers. found rate is improved when performed an elevated temperature target Photoluminescence reveal presence defects, which mostly removed by post-implantation annealing 200 °C, suggesting that, addition atoms substitutional positions, weakly bound adatoms most common defects introduced energy.

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ژورنال

عنوان ژورنال: npj 2D materials and applications

سال: 2022

ISSN: ['2397-7132']

DOI: https://doi.org/10.1038/s41699-022-00318-4