Low driven voltage green electroluminescent device based on Er:Ga2O3/GaAs heterojunction

Green light-emitting device (LED) based on Er:Ga 2 O 3 /GaAs heterojunction was fabricated in this work. Erbium (Er) doped Ga film prepared p -GaAs substrate by pulsed laser deposition. The structural, morphological and optical properties were investigated X-ray diffraction, atomic force microscope photoluminescence. Bright green electroluminescence dominated 524 549 nm peaks can be observed with the naked eyes at a driven voltage of 6.0 V. These emissions determined to caused 4f-electron transitions Er 3+ from H 11/2 ? 4 I 15/2 , S 3/2 respectively. It is that Er-related arose transfer energy released defect-assisted indirect recombination host ions. We believe fabrication LED will make contribution future integration optoelectronic devices compatible GaAs technology. • grown investigated. for first time. low transport mechanism understood.