Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions
نویسندگان
چکیده
منابع مشابه
Low Damage Etching of GaN Surfaces via Bias-Assisted Photoenhanced Electrochemical Oxidation in Deionized Water
Properties of GaN surfaces etched by bias-assisted photoenhanced electrochemical (PEC) oxidation in deionized water and subsequent removal of the oxidized material are investigated using Schottky diodes fabricated on etched surfaces. It is demonstrated that with a short anneal at 700 C after removal of the oxide, it is possible to obtain a low damage surface with near ideal breakdown and capaci...
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1. Introduction The surface trap of AlGaN/GaN high electron mobility transistors (HEMTs) can cause current collapse phenomenon which is the most serious limiting factor of the device's output power at high frequency operation. The surface passivation is a key step to reduce surface state effects and the quality of surface passivation film is very important [1]. Silicon nitride (SiNX) is widely ...
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1 Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan 2 Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan Advanced Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan Microsystems Technology Laboratories, Massachusetts Institute of Technolog...
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The nature of structural degradation in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated in this work. Moisture from the environment and/or adsorbed water on the III-N surface were found to play an important role in the formation of surface pits during OFF-state electrical stress. The mechanism of this water-related structural degradation is explained by an electrochemical ...
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Feng Gao, Carl. V. Thompson, Jesús del Alamo and Tomás Palacios Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA, email: [email protected] The last twenty years have witnessed numerous de...
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ژورنال
عنوان ژورنال: IEEE Transactions on Semiconductor Manufacturing
سال: 2019
ISSN: 0894-6507,1558-2345
DOI: 10.1109/tsm.2019.2934727