Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer

DFB laser monolithically integrated with amplifier array

High-current Ion Implanter for 300-mm SIMOX Wafer Production

OVERVIEW: There is an increased demand for the production of nextgeneration super-high-speed and low-power-consumption CMOS (complementary metal-oxide semiconductor) devices using SOI (silicon on insulator). Major global device manufacturers are actively commercializing this product. In SOI technology, a device is fabricated in a silicon layer (SOI layer) formed on a BOX (buried oxide) film. Al...

AN InGaAs-GaAs-AIGaAs LATERALLY-COUPLED DISTRIBUTED FEEDBACK (LC-DFB) RIDGE LASER DIODE

Results are presented on laterally-coupled distributed feedback (LC-DFB) ridge laser diodes. The cpitaxial regrowth required in most distributed feedback devices is eliminated by using lateral evanescent coupling of the field to gratings etched along the sides of the ridge. A pulsed single-mode output power of 36 mW per facet was achieved at 937.5 nm with a sidemode suppression ratio (SMSR) of ...

Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate

Monolithic vertical cavity surface emitting lasers (VCSELs) on Si are demonstrated. The GaSb multi-quantum well active region embedded in an Al(Ga)Sb half-wave cavity spacer layer enables lasing under room-temperature optically-pumped conditions. The 13% lattice mismatch is accommodated by a spontaneously formed 2-D array of 90 misfit dislocations at the AlSb=Si interface. This growth mode prod...

Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate

Room-temperature optically-pumped In0.2Ga0.8Sb quantum well lasers on Si are reported. The defect-free monolithic epistructure growth on a Si(100) substrate is initiated by an AlSb quantum dot nucleation layer followed by an AlSb=GaSb superlattice. The 13% mismatch between the AlSb and Si lattice is accommodated by misfit dislocations and associated crystallographic undulations in the AlSb buff...