Light polarization in tunnel junction injected UV light emitting diodes

InGaN/GaN light-emitting diode with a polarization tunnel junction

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can ...

Measuring the Output of UV Light Emitting Diodes (LEDs)

As UV lamp technology changes, so must the tools we use. The evolution of UV LEDs to cure inks, coatings and adhesives is having an effect on UV measurement equipment and technique. UV LEDs are narrow bandwidth sources with typical emission in the 365-405 nm region. Contrasted to medium pressure UV microwave and arc lamps, which emit across a broad spectrum, UV LEDs have high output in a very l...

Ordered nanowire array blue/near-UV light emitting diodes.

ZnO-based light emitting diodes (LEDs) have been considered as a potential candidate for the next generation of blue/ near-UV light sources, [ 1 ] due to a direct wide bandgap energy of 3.37 eV, a large exciton binding energy of 60 meV at room temperature, and several other manufacturing advantages of ZnO. [ 2 ] While the pursuit of stable and reproducible p-ZnO is still undergoing, [ 3,4 ] het...

Polarization of III-nitride blue and ultraviolet light-emitting diodes

Polarization-resolved electroluminescence studies of III-nitride blue and ultraviolet sUVd light-emitting diodes sLEDsd were performed. The LEDs were fabricated on nitride materials grown by metalorganic chemical vapor deposition on sapphire substrates s0001d. Transverse electric sTEd polarization dominates in the InGaN/GaN quantum-well sQWd blue LEDs sl8=458 nmd, whereas transverse magnetic sT...