منابع مشابه
analysis of power in the network society
اندیشمندان و صاحب نظران علوم اجتماعی بر این باورند که مرحله تازه ای در تاریخ جوامع بشری اغاز شده است. ویژگیهای این جامعه نو را می توان پدیده هایی از جمله اقتصاد اطلاعاتی جهانی ، هندسه متغیر شبکه ای، فرهنگ مجاز واقعی ، توسعه حیرت انگیز فناوری های دیجیتال، خدمات پیوسته و نیز فشردگی زمان و مکان برشمرد. از سوی دیگر قدرت به عنوان موضوع اصلی علم سیاست جایگاه مهمی در روابط انسانی دارد، قدرت و بازتولید...
15 صفحه اولLow Power and High Performance Dynamic CMOS XOR/XNOR Gate
A hybrid network is proposed in dynamic CMOS XOR/XNOR gate to avoid signal skew and reduce the power consumption. Compared to the standard N type dynamic gate leakage power, dynamic power and layout area of the novel XOR/XNOR gate are reduced. In this paper we studied different technologies, their merits and demerits. Comparison of different technologies is completely on the basis of leakage po...
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Conventional leakage reduction techniques focus primarily on sub-threshold leakage mitigation, while neglecting the effect of gate leakage current. This work focuses on understanding gate leakage current and developing circuit techniques for total leakage minimization. We present an efficient technique for gate leakage of CMOS circuits. Input vector control and circuit reconfiguration technique...
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Modeling gene regulatory networks requires recognition of active transcriptional sites in the genome. For this reason, we present a novel approach for inferring active transcriptional regulatory modules in a genome using an established systems model of bit encoded DNA sequences. Our analysis showed variations in several properties between random and functional sequences. Cross correlation withi...
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Exclusive-OR (XOR) operation plays an important role in the hardware implementation of many cryptographic algorithms. Since the hardware implementation of XOR gate is vulnerable to side channel analysis such as power analysis attacks, efficient countermeasures are required. The existing approaches provide countermeasures by placing more number of transistors at key locations in the gate impleme...
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ژورنال
عنوان ژورنال: ISRN Electronics
سال: 2013
ISSN: 2090-8679
DOI: 10.1155/2013/271316