Lattice Location of Rare Earth Ions in Semiconductors and Their Optical Activity

LATTICE LOCATION AND OPTICAL ACTIVATION OF RARE EARTH IMPLANTED GaN

This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a special focus on their lattice location and on the optical activation by means of thermal annealing. While emission channeling experiments have given information on the lattice location of rare earths following low-dose (≈10 cm) implantation, both in the asimplanted state and after annealing up to 900°C, the...

Cluster calculations of rare-earth ions in semiconductors.

Rare Earth doped Semiconductors for Phosphors and Lasers

The emission properties of rare earth (RE)-doped GaN are of significant current interest for applications in full color displays, white lightingtechnology, and optical communications. We are currently investigating the photoluminescence (PL) properties of RE (Er, Eu, Tm)-dopedGaN thin-films prepared by solid-source molecular beam epitaxy. The most intense visible PL under above-gap exci...

Rare-Earth Doped Optical Fibers

An optical fiber becomes active by doping its core with one or more atomic elements, usually (but not restricted to) rare-earths (RE’s), more specifically, the lanthanides that occupy the atomic numbers 57 to 71 of the periodic table. As it will be mentioned later in more detail, they use three electrons in bonding to the condensed materials such as crystals and glasses to become triply ionized...

Optical Properties and Optical Spectroscopy of Rare Earth Ions in Solids 2.1 Electron–Phonon Coupling in Solids

The Franck-Condon principle plays an important role in understanding the nature of optical transitions in laser-active ions in solids. According to this principle, absorption of a photon is an instantaneous process during which the nuclei are enormously heavy as compared to the electrons. In other words, the electronic transition occurs on a time scale that is short compared to nuclear motion, ...