La ₂ NiO _4+? ?Based Memristive Devices Integrated on Si?Based Substrates

Valence change memories, in which internal redox reactions control the resistance are promising candidates for resistive random access memories (ReRAMs) and neuromorphic computing elements. In this context, La2NiO4+? (L2NO4), a mixed ionic-electronic conducting oxide, well known its highly mobile oxygen interstitial ions, emerges as potential switching material novel L2NO4-based memristive devices. However, their integration complementary metal oxide semiconductor (CMOS) technology still has to be demonstrated, major focus of previous studies been carried out on epitaxial films grown single crystals. work, optimization deposition temperature precursor solution composition is presented, allowing obtain high-quality polycrystalline L2NO4 thin by organic chemical vapor platinized silicon substrate, use these build devices vertical configuration with Ti top electrodes. A bipolar analog-type transition can achieved Ti/L2NO4/Pt While “forming” process required based nonoptimized considered drawback, Ti/optimized L2NO4/Pt forming-free exhibit good cyclability. These results prove response first time.