K-Band Power Amplifier for SATCOM
نویسندگان
چکیده
This study entailed the development of a K-Band power amplifier (PA). The proposed PA was implemented and verified using 65-nm bulk CMOS process. designed with two stages to obtain sufficient gain in K band. had chip area 0.93×0.47 mm2 including RF DC pads. manufactured design maximum saturation 22.4∼22.7 dBm 19–21 GHz frequency band, added efficiency (PAE) 39 %∼40 %. In two-tone simulation results, linear levels satisfying third-order inter-modulation distortion (IMD3) below −30 dBc were confirmed be 16∼17 24%∼26 % 19∼21 respectively.
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ژورنال
عنوان ژورنال: The Journal of Korean Institute of Electromagnetic Engineering and Science
سال: 2022
ISSN: ['2288-226X', '1226-3133']
DOI: https://doi.org/10.5515/kjkiees.2022.33.11.897