Ion-implanted PLZT ceramics: A new high-sensitivity image storage medium

Characterization of PLZT Ceramics for Optical Sensor and Actuator Devices

Preparation and characterization of transparent PZN–PLZT ceramics

Transparent Pb(Zn1/3Nb2/3)O3–(Pb1-xLax)(Zr1-yTiy)O3 (PZN–PLZT) ferroelectric ceramics have successfully been prepared by hot-pressed sintering in oxygen atmosphere. Uniform cylindrical samples with diameter as large as 50 mm can readily be obtained. X-ray analysis and scanning electron microscopy experiments showed a pure perovskite phase, thin grain boundaries, and uniform dense microstructure...

Characterization of High-energy Heavy-ion Implanted

BB-65 MeV ion implantation into InP compound semiconductor crystals with 5 MeV nitrogen ions has been investigated. The subsequent characterization was undertaken by a variety of techniques such as nuclear resonant reaction analysis, channeling Rutherford backscattering spectrometry, x-ray rocking curve measurement, and cross-sectional transmission electron microscopy. These techniques have cle...

Sensitivity of Bragg surface diffraction to analyze ion-implanted semiconductors

A special case of the x-ray multiple diffraction phenomenon, the Bragg surface diffraction ~BSD!, has been investigated under lattice damage due to ion implantation in GaAs ~001! samples. The BSD profile is very sensitive to the diffraction regime ~dynamical or kinematical! and provides information regarding crystalline perfection and lattice strains in both directions—parallel and perpendicula...

The high sensitivity of InN under rare earth ion implantation at medium range energy

In this work, the damage formation in InN layers has been investigated subsequent to europium implantation at 300 keV and room temperature. The layers of several microns were produced by Hydride Vapour Phase Epitaxy and used as matrices for ion implantation experiments due to their good crystalline quality. From this investigation, it is shown that InN exhibits a low stability under rare earth ...