منابع مشابه
ion Implantation of boron in germanium
The activation of boron implanted at room temperature into germanium has been studied. In contrast to other group III elements boron forms a p-type layer before any postl.1nplant annealIng steps. Variable temperature Hall effect measurements and deep level trans{ent spectroscopy experiments indicate that all of the boron ions are electricaHy active as shallow acceptor the en.tire dose range (5 ...
متن کاملEnhanced Life Ion Source For Germanium And Carbon Ion Implantation
Germanium and carbon ions represent a significant portion of total ion implantation steps in the process flow. Very often ion source materials that used to produce ions are chemically aggressive, especially at higher temperatures, and result in fast ion source performance degradation and a very limited lifetime. GeF4 and CO2 are commonly used to generate germanium and carbon beams. In the case ...
متن کاملTemperature-dependant study of phosphorus ion implantation in germanium
We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectromet...
متن کاملA study of ion implantation into crystalline germanium
We report an experimental and simulation study for introducing dopant ions into (100) germanium in the energy range from 5 to 40 keV. The successful calibration of our Monte Carlo ion implantation simulator for amorphous and crystalline Ge targets is demonstrated by comparison of predicted boron profiles with SIMS data. The implantation profile in Ge is shallower than in Si for a given energy d...
متن کاملRadiation-enhanced self- and boron diffusion in germanium
We report experiments on proton radiation-enhanced selfand boron (B) diffusion in germanium (Ge) for temperatures between 515 ◦C and 720 ◦C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction and the interstitialcy and dissociative diffusion mechanisms. The numerical simulations ascertain con...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1987
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.337918