Ion beam analysis of as-received, H-implanted and post implanted annealed fusion steels

Determination of complex dielectric functions of ion implanted and implanted-annealed amorphous silicon by spectroscopic ellipsometry

Measuring with a spectroscopic ellipsometer (SE) in the 1.845 eV photon energy region we determined the complex dielectric function (E = e1 + ieZ> of different kinds of amorphous silicon prepared by self-implantation and thermal relaxation (500 “C, 3 h) . These measurements show that the complex dielectric function (and thus the complex refractive index) of implanted a-Si (i-a-Si) differs from ...

Extended defects formation in nanosecond laser-annealed ion implanted silicon.

Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron...

Electron and trap dynamics in As-ion-implanted and annealed GaAs

Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon

Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO

Rights: © 2006 American Physical Society (APS). This is the accepted version of the following article: Børseth, T. Moe & Tuomisto, Filip & Christensen, J. S. & Skorupa, W. & Monakhov, E. V. & Svensson, B. G. & Kuznetsov, A. Yu. 2006. Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO. Physical Review B. Volume 74, Issue 16. 161202/1-4. ISSN 1098-0121 (printed). DOI: ...