Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs
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چکیده
منابع مشابه
Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs
We investigated the source-to-drain capacitance (Csd) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of Csd by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) PN junctions have negative or zero values by small DIBL effect. By considering the additional source-todrain cap...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2010
ISSN: 1349-2543
DOI: 10.1587/elex.7.1499