Investigation of Base Transport Mechanism in Silicon-Germanium Heterojunction Bipolar Transistor Operating over Wide Temperature Range

Abstract A high breakdown voltage silicon-germanium heterojunction bipolar transistor operated over a wide temperature range from 300 K to 10 has been investigated. The measured Gummel characteristics illustrate that the collector current and base both shift higher as decreases. f T /f max are extracted be 23/40 GHz at 300K, 28/40 90 K, 25/37GHz 10K, respectively. effective amplification becomes narrow And ideality factor of in low region is shown temperature-dependent its value much larger than 2 cryogenic temperatures. This phenomenon indicates not only contributed by drift, diffusion, Shockley-Read-Hall recombination, but also trap-assisted tunneling. Hurkx local tunneling used analyze non-ideal transport mechanism. calibrated TCAD device model developed further verify this