Inverse RIE Lag during Silicon Etching in SF6 + O2 Plasma
نویسندگان
چکیده
منابع مشابه
Cryogenic etching of silicon with SF6/O2/SiF4 plasmas: a modelling and experimental study
Cyrogenic etching of silicon is envisaged to enable better control over plasma processing in microelectronics and to limit plasma induced damage for features beyond the 14 nm technology node. We here present results of plasma modelling for a SF6/O2/SiF4 plasma and of molecular dynamics (MD) simulations for predicting surface interactions, together with results of etch experiments for validation.
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Potential application of the high aspect ratio cryogenic SF6/O2 plasma ething process for developing trench based inertial micromechanical devices with capacitive sensing, is investigated and demonstrated. An ICtechnology compatible process flow involving anodic bonding of silicon to glass and plasma etching as a single post processing step is identified. It involves a novel method for front-to...
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The etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) in the afterglow of NF3 and NF3 /O2 microwave discharges has been characterized. The etch rates of both materials increase approximately linearly with the flow of NF3 due to the increased availability of F atoms. The etch rate of Si3N4 is enhanced significantly upon O2 injection into the NF3 discharge for O2 /NF3 ratios of 0.3 an...
متن کاملSilicon etching in NF3/O2 remote microwave plasmas
The etching of silicon in remote microwave discharges fed with NF3 /O2 has been investigated. In situ ellipsometry and x-ray photoelectron spectroscopy ~XPS! were used to monitor surface effects, while mass spectrometry was used to monitor the gas phase dynamics. Varying the microwave power from 600 to 1400 W has little effect, due to the near complete dissociation of the NF3, even at lower pow...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2020
ISSN: 1898-794X,0587-4246
DOI: 10.12693/aphyspola.137.313