Inverse and normal tunneling magnetoresistance effects in FeCoGd/FeCo/AlO/FeCo multilayers
نویسندگان
چکیده
منابع مشابه
Mesoscopic tunneling magnetoresistance
We study spin-dependent transport through ferromagnet/normal-metal/ferromagnet double tunnel junctions in the mesoscopic Coulomb-blockade regime. We calculate the conductance in the absence or presence of spin-orbit interaction and for arbitrary orientation of the lead magnetizations. The tunneling magnetoresistance ~TMR!, defined at the Coulomb-blockade conductance peaks, is calculated and its...
متن کاملTheory of Tunneling Magnetoresistance
Rigorous theory of the tunneling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is described. It is first applied to calculate the TMR of two Co electrodes separated by a vacuum gap. The calculated TMR ratio reaches 65% in the tunneling regime but can be as high as 280% in the metallic regime when the va...
متن کاملTunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects
We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with...
متن کاملFerromagnetic Multilayers: Magnetoresistance, Magnetic Anisotropy, and Beyond
Obtaining highly sensitive ferromagnetic, FM, and nonmagnetic, NM, multilayers with a large room-temperature magnetoresistance, MR, and strong magnetic anisotropy, MA, under a small externally applied magnetic field, H, remains a subject of scientific and technical interest. Recent advances in nanofabrication and characterization techniques have further opened up several new ways through which ...
متن کاملAnisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions
The effects of the spin-orbit coupling SOC on the tunneling magnetoresistance of ferromagnet/ semiconductor/normal-metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance TAMR are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interfer...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2010
ISSN: 1742-6596
DOI: 10.1088/1742-6596/200/5/052002