Introduction of VN underlayer and caplayer for preparation of Mn<sub>4</sub>N(001) single-crystal thin film with perpendicular magnetic anisotropy

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چکیده

A Mn 4 N thin film is prepared on MgO(001) single-crystal substrate by introducing VN underlayer and caplayer which are respectively expected to inhibit the oxidation from surface. The ultra-high vacuum radio-frequency magnetron sputtering. growth, structure, magnetic properties investigated. fully epitaxial VN/Mn N/VN with sharp interfaces formed substrate. has low out-of-plane in-plane orientation dispersions of about 1° high site order degree 0.88. lattice slightly deformed along perpendicular direction ( c/a = 0.9872) possibly due accommodation mismatch at interfaces. shows a saturation magnetization 85 kA/m (85 emu/cm 3 ) strong anisotropy. present study shown that introduction useful for preparation well-defined films

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ژورنال

عنوان ژورنال: AIP Advances

سال: 2023

ISSN: ['2158-3226']

DOI: https://doi.org/10.1063/9.0000572