Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding

investigations of GaN surface quantum well in AlGaN/GaN transistor heterostructures by contactless electroreflectance spectroscopy

Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness

We investigated the influence of the thickness of the AlN interlayer for InAlN/GaN and InAlN/AlGaN/GaN heterostructures. The AlN thickness strongly affects the surface morphology and electron mobility of the InAlN/GaN structures. The rms roughness of the surface increases from 0.35 to 1.2 nm with increasing AlN thickness from 0 to 1.5 nm. Large pits are generated when the AlN is thicker than 1 ...

Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer

AlxGa1−xN/GaN x 0.3 heterostructures with and without a high-temperature HT AlN interlayer IL have been grown on sapphire Al2O3 substrates and AlN buffer/Al2O3 templates by metal organic chemical vapor deposition. The effects of an AlN buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL on structural, morphological, and optical properties of the hete...

Coaxial GaN/InGaN/GaN Nano-Heterostructures

The optimization of the epitaxial quality and ordering of coaxial GaN/InGaN/GaN nanoheterostructures is the main focus of this study. Two approaches for the realization of upright ZnO nanipillars, used as templates for the epitaxially grown GaN layers, with their respective degrees of pattern arrangement are introduced. Consequently, the growth of coaxial GaN/InGaN/GaN quantum wells (for three ...

Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates.

Light extraction of GaN-based light-emitting diodes grown on Si(111) substrate (GaN-on-Si based LEDs) is presented in this study. Three different designs of GaN-on-Si based LEDs with the lateral structure, lateral structure on mirror/Si(100) substrate, and vertical structure on mirror/Si(100) substrate were epitaxially grown by metalorganic chemical vapor deposition and fabricated using chemica...