Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor
نویسندگان
چکیده
منابع مشابه
Nonballistic spin-field-effect transistor.
We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba couplin...
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In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the " off "-state, resulting in significant standby power dissipation....
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Submitted for the MAR11 Meeting of The American Physical Society Sorting Category: 17.9.5 (C) Ballistic Spin Field Effect Transistor Based on Silicon Nanowires1 DMITRI OSINTSEV, VIKTOR SVERDLOV, ZLATAN STANOJEVIC, SIEGFRIED SELBERHERR, Institute for Microelectronics, TU Wien — We investigate the properties of ballistic spin fieldeffect transistors build on silicon nanowires. An accurate descrip...
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We investigate the properties of ballistic fin-structured silicon spin field-effect transistors. The spin transistor suggested first by Datta and Das employs spin-orbit coupling to introduce the current modulation. The major contribution to the spin-orbit interaction in silicon films is of the Dresselhaus type due to the interface-induced inversion symmetry breaking. The subband structure in si...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2001
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.64.125314