Interface Engineering of CZTS/TiO <sub>2</sub> Heterojunction Using Wide‐Bandgap Ga <sub>2</sub> O <sub>3</sub> Passivation Interlayer for Efficient Charge Extraction
نویسندگان
چکیده
Field-Effect Passivation The implementation of Ga2O3 thin film effectively passivates the CZTS/TiO2 heterojunction by blocking holes away from buffer layer and acts as an electron-selective contact. This hole-blocking reduces interface recombination evident significant photoluminescence quenching. More information can be found in article number 2200001 Mukesh Kumar co-workers.
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ژورنال
عنوان ژورنال: Physica Status Solidi A-applications and Materials Science
سال: 2022
ISSN: ['1862-6300', '1862-6319']
DOI: https://doi.org/10.1002/pssa.202270030