Interface chemistry and epitaxial growth modes ofSrF2on Si(001)
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NiSi2/Si interface chemistry and epitaxial growth mode
Epitaxial NiSi2 thin films are formed by annealing of Ni on sulfur-implanted silicon (100). The atomic structure and chemistry of the NiSi2/Si interface are investigated by aberration-corrected transmission electron microscopy. The interface is atomically sharp and runs mainly along the (100) plane. {111} segments of interface are also observed as minor facets. The atomic structure of the (100)...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2007
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.75.075403