Insulator-to-metal transition of WO3epitaxial films induced by electrochemical Li-ion intercalation

Reversible superconductor-insulator transition in LiTi2O4 induced by Li-ion electrochemical reaction

Transition metal oxides display various electronic and magnetic phases such as high-temperature superconductivity. Controlling such exotic properties by applying an external field is one of the biggest continuous challenges in condensed matter physics. Here, we demonstrate clear superconductor-insulator transition of LiTi2O4 films induced by Li-ion electrochemical reaction. A compact electroche...

Metal-insulator transition in ultrathin LaNiO3 films.

Transport in ultrathin films of LaNiO(3) evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e(2), the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low-temperature conductivity are observed; they are accurately described by weak localization theor...

Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

T. Tachikawa, M. Minohara, Y. Nakanishi, Y. Hikita, M. Yoshita, H. Akiyama, C. Bell, and H. Y. Hwang Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA. Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan. Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277...

Li+-intercalation electrochemical/electrochromic properties of vanadium pentoxide films by sol electrophoretic deposition

Thin films of orthorhombic V2O5 have been prepared by sol electrophoretic deposition (EPD) followed by post-treatment at 500 ◦C. Their electrochemical and optical performances have been investigated for possible applications in electrochemical/electrochromic devices. Li+-intercalation properties of the films have been explored in two voltage ranges: 0.4 to −1.1 V and 0.4 to −1.6 V versus Ag/Ag+...

Metal-to-insulator transition in sputter deposited 3NiÕAl thin films