Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes

Influence of graphene oxide on metal-insulator-semiconductor tunneling diodes

In recent years, graphene studies have increased rapidly. Graphene oxide, which is an intermediate product to form graphene, is insulating, and it should be thermally reduced to be electrically conductive. We herein describe an attempt to make use of the insulating properties of graphene oxide. The graphene oxide layers are deposited onto Si substrates, and a metal-insulator-semiconductor tunne...

Chemically induced charge carrier production and transport in Pd/SiO2/n-Si„111... metal-oxide-semiconductor Schottky diodes

The energy transfer associated with reactions at metal surfaces produces energetic electrons and holes. Using ultrathin films of Pd on metal-semiconductor (MS) and metal-oxide-semiconductor (MOS) diode structures, we have investigated reaction-induced electrical phenomena associated with a variety of molecular and atomic interactions with the Pd surfaces. Distinct electronic signals are observa...

Technique for producing highly planar Si/SiO0.64Ge0.36 /Si metal–oxide–semiconductor field effect transistor channels

Session DD: Oxide Semiconductor Heterojunction Diodes

8:20 AM DD1, Ultraviolet Photodetectors with Novel Oxide Thin Films: Shizuo Fujita1; Takumi Ikenoue1; Naoki Kameyama1; Takayoshi Oshima1; 1Kyoto University A variety of wide band gap oxide semiconductors, which are recognized as stable and environmental-friendly materials, can meet various demands for detectable wavelength, sensitivity, cost, and endurance of ultraviolet photodetectors, in cont...

Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor Process

Optical modulators for optical interconnects require a small size, small voltage, high speed and wide working spectrum. For this purpose, we developed Si slow-light Mach-Zehnder modulators via a 180 nm complementary metal-oxide-semiconductor process. We employed 200 μm lattice-shifted photonic crystal waveguides with interleaved p-n junctions as phase shifters. The group index spectrum of slow ...