InGaN nano-ring structures for high-efficiency light emitting diodes

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells.

Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole wavefunction overlap and improved radiative recombination rate are investigated for nitride LEDs application. The effect of interface abruptness in staggered InGaN QWs on radiative recombination rate is studied. Studies show t...

Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range

Light-emitting diodes (LEDs) in the wavelength region of 535-570 nm are still inefficient, which is known as the "green gap" problem. Light in this range causes maximum luminous sensation in the human eye and is therefore advantageous for many potential uses. Here, we demonstrate a high-brightness InGaN LED with a normal voltage in the "green gap" range based on hybrid multi-quantum wells (MQWs...

Nanopatterned aluminum nitride template for high efficiency light-emitting diodes.

Nanopatterned aluminum nitride (NP-AlN) templates were used to enhance the light extraction efficiency of the light-emitting diodes (LEDs). Here, the NP-AlN interlayer between the sapphire substrate and GaN-based LED was used as an effective light outcoupling layer at the direction of bottom side and as a buffer layer for growth of GaN LEDs. The cross-sectional transmission electron microscopy ...

A hole accelerator for InGaN/GaN light-emitting diodes

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k p method is used to calculate the band structure for InGaN QW. The analysis indicates that the...