InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

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InGaAs/InAlAs single photon avalanche diode for 1550 nm photons.

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage depend...

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ژورنال

عنوان ژورنال: Royal Society Open Science

سال: 2016

ISSN: 2054-5703

DOI: 10.1098/rsos.150584