InGaAs Junctionless FinFETs with Self-Aligned Ni-InGaAs S/D
نویسندگان
چکیده
منابع مشابه
InGaAs finFETs for future CMOS
The last few years have witnessed an explosion of interest in exploring the use of III-Vs to advance logic CMOS beyond the point of diminishing returns for silicon technology. There is now a tantalizing possibility that these compound semiconductors will enter the CMOS roadmap. If they do, the benefits could be huge – they could extend Moore’s Law by two or three more nodes, a huge contribution...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2018
ISSN: 2168-6734
DOI: 10.1109/jeds.2018.2859811