Influence of Sacrificial Layer Germanium Content on Stacked-Nanowire FET Performance
نویسندگان
چکیده
منابع مشابه
Influence of a Stacked-CuPc Layer on the Performance of Organic Light-Emitting Diodes
Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered, organic, light-emitting diode (OLEDs). The well-stacked CuPc layer increased the stability and efficiency of the devices. Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were per...
متن کاملFabrication of suspended dielectric mirror structures via xenon difluoride etching of an amorphous germanium sacrificial layer
The authors present a simplified fabrication method for the creation of free-standing dielectric mirrors for use in monolithic wavelength tunable surface-normal photonic devices, including vertical-cavity surface emitting lasers. This process utilizes a nonplasma dry etching process, based on the noble gas halide, xenon difluoride XeF2 , to remove an inorganic sacrificial film comprised of low-...
متن کاملRapid Sacrificial Germanium Etching Using Xenon Difluoride
We present a novel micromachining procedure employing the noble gas halide, xenon difluoride (XeF2), to rapidly undercut a sacrificial layer comprised of low-temperature deposited amorphous germanium (α-Ge). As a proof of concept, this process is utilized to fabricate electrostatically-actuated suspended Bragg mirrors applicable to wavelength-tunable surface-normal photonic devices. Exploiting ...
متن کاملLead-supported germanium nanowire growth
The Pb-assisted growth of Ge nanowires (NWs) has been investigated under high and low pressure conditions via thermal decomposition of diphenylgermane. Highly crystalline Ge NWs were obtained and Pb was established as a viable growth promoter with the Pb particle being in the solid and liquid state. & 2016 Elsevier B.V. All rights reserved.
متن کاملHigh-Density Arrays of Germanium Nanowire Photoresistors
Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, Eg, of approximately 0.66 eV (temperature T = 300 K) and has been widely used for the fabrication of photodetectors, radiation detectors, charged particle and phot...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Access
سال: 2019
ISSN: 2169-3536
DOI: 10.1109/access.2019.2925201