Influence of post-annealing in sulfur atmosphere on thermally evaporated ?-In2S3 films

Indium sulfide (In2S3) is an n-type semiconductor with wide bandgap energy (2.2–2.7 eV) and currently used as buffer/window layer in thin film solar cells alternative to toxic CdS. In the present study, In2S3 films were deposited on soda lime glass substrates using thermal evaporation technique at different substrate temperatures, Ts = 200 °C–350 °C. Further, all as-deposited annealed sulfur ambient 250 °C for 1 h. The structural, compositional optical properties of analyzed GIXD, EDS Photon RT spectrophotometer respectively. All exhibited polycrystalline nature improved crystallinity high transmittance visible region. Moreover, deficient whereas layers S/In ratio was increased due annealing. Therefore, annealing atmosphere enhanced quality films. Among films, grown 300 followed by have shown better structural than other