Influence of Parasitic Effects in Negative Differential Resistance Characteristics of Resonant Tunneling
نویسندگان
چکیده
منابع مشابه
Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature
GaN/AlN resonant tunneling diodes RTD were grown by metal-organic chemical vapor deposition MOCVD and negative differential resistance with peak-to-valley ratios as high as 2.15 at room temperature was demonstrated. Effect of material quality on RTDs’ performance was investigated by growing RTD structures on AlN, GaN, and lateral epitaxial overgrowth GaN templates. Our results reveal that negat...
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We report a systematical study of the temperature-dependence of negative deferential resistance (NDR) from double-barrier Al0.35Ga0.65N/GaN resonant tunneling diodes grown by plasma-assisted molecular-beam epitaxy on free-standing GaN substrates. The current–voltage (I–V) characterization was done in the 6–300 K temperature range. A clear NDR signature was observed for mesa sizes of 4 × 4 μm2 a...
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15 صفحه اولReliable GaN-based Resonant Tunneling Diodes with Reproducible Room-temperature Negative Differential Resistance
Resonant tunneling diode (RTD) is an electronic device embodying a unique quantum-interference phenomenon: negative differential resistance (NDR). Compared to other negative resistance devices such as (Esaki) tunnel and transferred-electron devices, RTDs operate much faster and at higher temperatures. III-nitride materials, composed of AlGaInN alloys, have wide bandgap, high carrier mobility an...
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ژورنال
عنوان ژورنال: Electronics
سال: 2019
ISSN: 2079-9292
DOI: 10.3390/electronics8060673