Infiltration of ZnO in Mesoporous Silicon by Isothermal Zn Annealing and Oxidation
نویسندگان
چکیده
منابع مشابه
Infiltration of ZnO in mesoporous silicon by isothermal Zn annealing and oxidation
In this work a two-step procedure is reported for the formation of ZnO/porous silicon (PS) composites in which ZnO is embedded in the pores of sponge like mesoporous silicon. The procedure consists of an isothermal annealing of the PS layer in Zn vapors using a close space configuration and a subsequent oxidation of the Zn infiltrated in the pores. The oxidation agent and the annealing duration...
متن کاملMechanism of Zn Particle Oxidation by H2O and CO2 in the Presence of ZnO
In this work we investigate the mechanism of Zn oxidation with CO2 and/or H2O to produce solar derived fuels (CO and/or H2) as part of the Zn/ZnO thermochemical redox cycle. It has been observed that the ZnO contamination of Zn produced by solar thermal reduction of ZnO (solar Zn) facilitates oxidation of the metallic Zn by CO2 and H2O, allowing for nearly complete conversion at temperatures as...
متن کاملdetermination of olanzapine and thiourea using electrodes modified by dna and film of copper-cobalt hexacyanoferrate & investigation of electro-oxidation of some catechol derivatives in the presence of 4-phenylsemicarbazid
چکیده هدف از این کار بررسی الکترواکسیداسیون کتکول و مشتقات آن در حضور 4-فنیل سمی کاربامازید بوده است اکسیداسیون کتکولها ترکیبات نا پایدار کینونها را تولید می کنند که این ترکیبات می تواند در واکنش مایکل بعنوان پذیرنده نوکلئوفیل عمل نمایند. در ادامه اکسایش کتکولهای (a-c1) را درحضور 4-فنیل سمی کاربامازید در محلول آب/استونیتریل (90/10)بوسیله ولتامتری چرخه ای و کولن متری در پتانسیل ثابت مورد بررسی ...
15 صفحه اولSynthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin films at various temperatures.
In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties...
متن کاملEffect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film
Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that both long oxidation time and high oxidation temperature can obtain the film with a good transmittanc...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ECS Journal of Solid State Science and Technology
سال: 2015
ISSN: 2162-8769,2162-8777
DOI: 10.1149/2.0031602jss