Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications
نویسندگان
چکیده
منابع مشابه
Inductively Coupled Plasma Etching of Bulk Titanium for MEMS Applications
Titanium is a promising new material system for the bulk micromachining of microelectromechanical MEMS devices. Titaniumbased MEMS have the potential to be used for a number of applications, including those which require high fracture toughness or biocompatibility. The bulk titanium etch rate, TiO2 mask etch rate, and surface roughness in an inductively coupled plasma ICP as a function of vario...
متن کاملThree dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy
We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the InxGa1-xN/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E2(high) Raman peak intensity and frequency shift, V-shaped pits in the M...
متن کاملRegularly patterned nanorod light-emitting diode arrays
Regularly patterned InGaN/GaN quantum-well nanorod (NR) light-emitting diode (LED) arrays are grown with MOCVD and characterized with cathodoluminescence and transmission electron microscopy. The dependencies of their morphologies and emission behaviors on the geometry of growth pattern and MOCVD growth condition are investigated. Also, a light-emitting device consisting of such an NR LED array...
متن کاملEfficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crys...
متن کاملAbbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire
Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nanopatterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15 nm low-temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2008
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2008.05.046