Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD

Herein, metal–organic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level [Mg] ≈2 × 1019 cm−3 is performed. In a sequence MOCVD runs, operational conditions, including temperature and flow rate precursors, are maintained except for intentionally larger flows hydrogen carrier gas fed into reactor. By employing largest 25 slm in this study, performance as-grown Mg-doped certified by room-temperature hole concentration p 1017 absence any thermal activation treatment. Experimental evidence delivered that large amounts during growth can regulate incorporation significant way so MgH complex coexist dominant evidently electrically active isolated MgGa acceptor.