InAs quantum dots onGaAs(2¯5¯11¯)B: STM and photoluminescence studies
نویسندگان
چکیده
منابع مشابه
Submicrosecond correlations in photoluminescence from InAs quantum dots
Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with time scales from 10 to 800 ns. With above-band optical excitation, a long-time scale negative correlation ~antibunching! is observed, while with quasiresonant excitation, a positive correlation ~blinking! is observed. A simple model based on long-lived charged states is presented that ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2005
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.71.045336