In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Graphene/h-BN Heterostructure Interconnects

The material behavior of graphene, a single layer of carbon lattice, is extremely sensitive to its dielectric environment. We demonstrate improvement in electronic performance of graphene nanowire interconnects with full encapsulation by lattice-matching, chemically inert, 2D layered insulator hexagonal boron nitride (hBN). A novel layer-based transfer technique is developed to construct the h-...

متن کامل

Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure.

Stacking various two-dimensional atomic crystals is a feasible approach to creating unique multilayered van der Waals heterostructures with tailored properties. Herein for the first time, we present a controlled preparation of large-area h-BN/graphene heterostructures via a simple chemical deposition of h-BN layers on epitaxial graphene/SiC(0001). Van der Waals forces, which are responsible for...

متن کامل

Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field- effect transistors

Articles you may be interested in Microscopic origin of low frequency noise in MoS2 field-effect transistors Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap Appl. 1 ∕ f noise in Ga N ∕ Al Ga N heterostructure field-effect transistors in high magnetic fields at 300 K

متن کامل

In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy

Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitrid...

متن کامل

Robust Superlubricity in Graphene/h-BN Heterojunctions.

The sliding energy landscape of the heterogeneous graphene/h-BN interface is studied by means of the registry index. For a graphene flake sliding on top of h-BN, the anisotropy of the sliding energy corrugation with respect to the misfit angle between the two naturally mismatched lattices is found to reduce with the flake size. For sufficiently large flakes, the sliding energy corrugation is ex...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: NPG Asia Materials

سال: 2019

ISSN: 1884-4049,1884-4057

DOI: 10.1038/s41427-019-0162-6