In situ crystallization kinetics studies of plasma-deposited, hydrogenated amorphous silicon layers

Crystallization Kinetics Study in Al87Ni10La3 Amorphous Alloy

In this study, the crystallization behavior of melt-spun Al87Ni10La3 amorphous phase was investigated by using X-ray diffraction and non-isothermal differential thermal analysis techniques. The results demonstrated that the amorphous phase exhibited two-stage crystallization on heating, i.e., at first step the amorphous phase transforms into α-Al phase and at second step Al11La3 and Al3Ni inter...

Hydrogen-Plasma-Enhanced Crystallization of Hydrogenated Amorphous Silicon Films: Fundamental Mechanisms and Applications

The crystallization of hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECYD) by thermal annealing is of great interest for display and silicon-on-insulator (SOl) technologies. For large area electronics, there has been considerable interest to integrate both a-Si:H TFTs, for low leakage in the OFF state, and poly-Si TFTs, for high drive currents,...

Theoretical Studies of Structure and Doping of Hydrogenated Amorphous Silicon

In a-Si:H, large concentrations of B or P (of order 1%) are required to dope the material, suggesting that doping mechanisms are very different than for the crystal for which much smaller concentrations are required. In this paper, we report simulations on B and P introduced into realistic models of a-Si:H and a-Si, with concentrations ranging from 1.6% to 12.5% of B or P in the amorphous host....

Mechanisms of metastability in hydrogenated amorphous silicon

We survey theoretical approaches to understanding the diverse metastable behavior in hydrogenated amorphous silicon. We discuss a recently developed network-rebonding model involving bonding rearrangements of silicon and hydrogen atoms. Using tight-binding molecular dynamics we find non-radiative recombination can break weak silicon bonds with low activation energies, producing dangling bond–fl...

Luminescence quenching in erbiumdoped hydrogenated amorphous silicon