In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography
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منابع مشابه
Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography
A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (10(15)) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off...
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Please cite the original version: Roschier, Leif & Penttilä, Jari & Martin, Michel & Hakonen, Pertti J. & Paalanen, Mikko & Tapper, Unto & Kauppinen, Esko I. & Journet, Catherine & Bernier, Patrick. 1999. Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation. Applied Physics Letters. Volume 75, Issue 5. 728-730. ISSN 0003-6951 (printed). DOI: 10.1063/1...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1999
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.125045