In- and out-plane transport properties of chemical vapor deposited TiO2 anatase films

Due to their polymorphism, TiO2 films are quintessential components of state-of-the-art functional materials and devices for various applications from dynamic random access memory solar water splitting. However, contrary other semiconductors/dielectric materials, the relationship between structural/morphological electrical properties at nano microscales remains unclear. In this context, morphological characteristics obtained by metal–organic chemical vapor deposition (MOCVD) plasma-enhanced (PECVD), latter including nitrogen doping, investigated they linked in- out-plane properties. A transition dense tree-like columnar morphology is observed MOCVD with increasing temperature. It results in decrease grain size increase porosity disorder, subsequently, it leads lateral carrier mobility. The amount PECVD enhances disorder pillar-like along a slight density. similar behavior current low temperature undoped ones. structure presents lower in-plane resistivity than films, whereas lower. exhibits poor conductivity properties, conductivities even if morphologies noticeably different.