Improvement of Charge Injection Using Ferroelectric Si:HfO2 As Blocking Layer in MONOS Charge Trapping Memory
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چکیده
منابع مشابه
Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications
The charge-trapping characteristics of Ga2O3 (Gd2O3 ) (denoted as GGO) with and without nitrogen incorporation were investigated based on Al/Al2O3 / GGO/SiO2 /Si (metalalumina-nitride-oxide-silicon) capacitors. Compared with the capacitor without nitrogen incorporation, the one with nitrided GGO showed a larger memory window (10 V at ±16 V, 1 s), a higher program speed with a low gate voltage (...
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Non-volatile memories-providing the information storage functionality-are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understa...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2018
ISSN: 2168-6734
DOI: 10.1109/jeds.2017.2785304