منابع مشابه
Effects of the Spacer Length on the High-Frequency Nanoscale Field Effect Diode performance
The performance of nanoscale Field Effect Diodes as a function of the spacer length between two gates is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for S-FED as the spacer length between two gates increases whereas this ratio is approximately constant for M-FED. The high-frequency perform...
متن کاملEffects of the Channel Length on the Nanoscale Field Effect Diode Performance
Field Effect Diode (FED)s are interesting device in providing the higherON-state current and lower OFF–state current in comparison with SOI-MOSFETstructures with similar dimensions. The impact of channel length and band-to-bandtunneling (BTBT) on the OFF-state current of the side contacted FED (S-FED) has beeninvestigated in this paper. To find the lowest effective channel length, this device i...
متن کاملeffects of the spacer length on the high-frequency nanoscale field effect diode performance
the performance of nanoscale field effect diodes as a function of the spacer length between two gates is investigated. our numerical results show that the ion/ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for s-fed as the spacer length between two gates increases whereas this ratio is approximately constant for m-fed. the high-frequency perform...
متن کاملQuantitative nanoscale field effect sensors
Semiconductor nanowire field effect transistors have emerged as a promising technology for development of label-free biomolecular sensors for rapid diagnostics. However, their practical application has been hindered due to the significant device-to-device variations in electrical properties and the need for individual sensor calibration. Recent advances in device fabrication and demonstrations ...
متن کاملMemory cell using Modified Field Effect Diode
Using spice 9.3, we have modeled (I-V) characteristics of a Modified Field Effect Diode (M-FED) with gate length of 75 nm and oxide thickness of 10 nm. An SRAM cell (Register) has been designed with the simulated M-FED and has been compared to an SOIMOSFET based circuit. Simulation results demonstrate that clock frequency applied to a memory cell which is designed with M-FED is more than 2 orde...
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ژورنال
عنوان ژورنال: IET Circuits, Devices & Systems
سال: 2019
ISSN: 1751-858X,1751-8598
DOI: 10.1049/iet-cds.2018.5138