Improved design of InGaP/GaAs//Si tandem solar cells

Optimizing any tandem solar cells design before making them experimentally is an important way of reducing development costs. Hence, in this work, we have used a complete analytical model that includes the effects depletion regions III-V compound order to simulate behavior two and four-terminal InGaP/GaAs//Si for optimizing them. The optimization procedure described first, then it shown expected practical efficiencies at 1 sun (AM1.5 spectrum) both can be around 40% when appropriate thickness each layer used. optimized structures double MgF 2 /ZnS anti-reflection (ARC). results show optimum thicknesses are 130 (MgF ) 60 nm (ZnS), respectively, while InGaP 220 GaAs 1800 on HIT silicon cell (with total efficiency 39.8%). These compared with recent record experimental 35.9% kind cells. Therefore, triple junction InGaP/GaAs//Silicon continue being very attractive further development, using high as bottom sub-cell.