Improved chemical vapor transport growth of transition metal dichalcogenides
نویسندگان
چکیده
منابع مشابه
Vapor Transport Crystal Growth of the Transition Metal Dichalcogenide Compounds
Techniques are described for growing single crystals ofthe transition metal dichalcogenide compounds Nb1 — ~Ta~Se2(0 ~ x ~ 0.20). Both iodine and selenium vapor transport have been used. A portion of the phase diagram has been determined, in order to produce the desired 2H polymorpoh for all compositions of interest. Measurement of the superconducting transition temperature is shown to be a use...
متن کاملMetal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations
Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS2 and WS2 have successfully been fabricated on SiO2 substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS2 monolayers with the adjustable size up to 50 μm are grown surrounding these metal patterns and the mobility of such layer ...
متن کاملPhysical and chemical tuning of two-dimensional transition metal dichalcogenides.
The development of two-dimensional (2D) materials has been experiencing a renaissance since the adventure of graphene. Layered transition metal dichalcogenides (TMDs) are now playing increasingly important roles in both fundamental studies and technological applications due to their wide range of material properties from semiconductors, metals to superconductors. However, a material with fixed ...
متن کاملLarge area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies.
We investigate the growth mechanism and temperature dependent Raman spectroscopy of chemical vapor deposited large area monolayer of MoS2, MoSe2, WS2 and WSe2 nanosheets up to 70 μm in lateral size. Further, our temperature dependent Raman spectroscopy investigation shows that softening of Raman modes as temperature increases from 80 K to 593 K is due to the negative temperature coefficient and...
متن کاملPhase engineering of transition metal dichalcogenides.
Transition metal dichalcogenides (TMDs) represent a family of materials with versatile electronic, optical, and chemical properties. Most TMD bulk crystals are van der Waals solids with strong bonding within the plane but weak interlayer bonding. The individual layers can be readily isolated. Single layer TMDs possess intriguing properties that are ideal for both fundamental and technologically...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2014
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2013.12.070