Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition

SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition

Influence of sapphire pretreatment conditions on crystalline quality of AlN epilayers has been investigated by metal organic chemical vapor deposition (MOCVD). Compared to alumination treatment, it is found that appropriate sapphire nitridation significantly straightens the surface atomic terraces and decreases the X-ray diffraction (0002) full width at half maximum (FWHM) to a minimum of 55 ar...

Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition

Structural and electrical characterization of Bi₂Se₃ nanostructures grown by metal-organic chemical vapor deposition.

We characterize nanostructures of Bi(2)Se(3) that are grown via metal-organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 μm long or thin micrometer-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mΩ·cm. We observe weak antilocali...

AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

AlN/GaN double-barrier resonant tunneling diodes RTDs were grown by metal-organic chemical vapor deposition on sapphire. RTDs were fabricated via standard processing steps. RTDs demonstrate a clear negative differential resistance NDR at room temperature RT . The NDR was observed around 4.7 V with a peak current density of 59 kA /cm2 and a peak-to-valley ratio of 1.6 at RT. Dislocation-free mat...