Impact of Thermal Treatment on PECVD Al2O3 Passivation Layers

On the influence of ICP–PECVD deposition parameters and annealing on the properties of a–Si:H passivation layers

Hydrogenated amorphous silicon (a–Si:H) can be applied as a passivation layer in silicon heterojunction (SHJ) solar cells. In this project, depositions of a–Si:H thin films have been carried out using ICP–PECVD under several deposition conditions. This has been done to gain insight into the deposition process and how the properties of the deposited film can be controlled. To reach this goal, th...

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochr...

Al2O3/TiO2 stack layers for effective surface passivation of crystalline silicon

Characterization of thermally treated PECVD SiON layers

PECVD Silicon Oxynitride (SiON) layers with different refractive indices (1.472-1.635) were grown and characterized. The as-deposited layers have good thickness uniformity (~1%) and a high homogeneity of the refractive index (~ 5x10-4) over the wafer area. For telecommunication application, however, the optical losses of the as-deposited layers are unacceptably high. Therefore, the loss reducti...

Passivation of Si Surfaces by PECVD Aluminum Oxide