Impact of oxygen on gallium doped germanium

Germanium (Ge) has advantageous materials properties and is considered as a mainstream material for nanoelectronic applications. Understanding dopant–defect interactions important to form well-defined doped regions devices. Gallium (Ga) key p-type dopant in Ge. In the present density functional theory study, we concentrate on structures electronic of Ga Ge presence vacancies oxygen. We provide information defect charge transfer between atom nearest neighbor atom. The calculations show that site facilitates formation at 0.75 eV. interstitial oxygen endoergic with −2 both bulk substituted although substitution slightly less impact formation.