منابع مشابه
Hydrogen in oxide semiconductors
Matthew D. McCluskey, Marianne C. Tarun and Samuel T. Teklemichael Journal of Materials Research / Volume 27 / Issue 17 / 2012, pp 2190 2198 DOI: 10.1557/jmr.2012.137 Link to this article: http://journals.cambridge.org/abstract_S0884291412001379 How to cite this article: Matthew D. McCluskey, Marianne C. Tarun and Samuel T. Teklemichael (2012). Hydrogen in oxide semiconductors. Journal of Mat...
متن کاملHydrogen in compound semiconductors
Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...
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SUMMARY Hydrogen exhibits a number of distinct eeects in semiconductors. These include: the neutral-isation of shallow impurities; the removal of deep states which act as recombination centres; the catalytic enhancement of oxygen diiusion; the change in the electrical characteristics of transition metal impurities. The basic theoretical methods that have been used to investigate these are descr...
متن کاملPassivation of copper in silicon by hydrogen
The structures and energies of model defects consisting of copper and hydrogen in silicon are calculated using the AIMPRO local-spin-density functional method. For isolated copper atoms, the lowest energy location is at the interstitial site with Td symmetry. Substitutional copper atoms are found to adopt a configuration with D2d symmetry. We conclude that the symmetry is lowered from Td due to...
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Improvement in the electrical properties of the GaAs surface has been accomplished using a room-temperature hydrogen sulfide plasma. The surface has then been protected by a 300 “C plasma enhanced chemical vapor deposition (PECVD) SiO, film. This treatment is highly reproducible due to computer control of process parameters and long-lasting due to the SiOz cap. Improved C-V characteristics were...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1992
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.82.585