Hydrodynamic Device Modeling with Band Nonparabolicity

Device modeling for split-off band detectors

An approach to develop room temperature detectors is to use transitions between the light/heavy hole bands and the split-off hole band to produce enhanced response at high temperature. Results are presented on a theoretical model to predict the response in these split-off detectors. The model calculates the dark and illuminated currents from the photoabsorption, carrier escape, and transport, e...

Gravity-driven microfluidic particle sorting device with hydrodynamic separation amplification.

This paper describes a simple microfluidic sorting system that can perform size profiling and continuous mass-dependent separation of particles through combined use of gravity (1 g) and hydrodynamic flows capable of rapidly amplifying sedimentation-based separation between particles. Operation of the device relies on two microfluidic transport processes: (i) initial hydrodynamic focusing of par...

Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity

Photoluminescence PL has been used as a means of unambiguously observing band gap reduction in InNAs epilayers grown by molecular beam epitaxy. The observed redshift in room temperature emission as a function of nitrogen concentration is in agreement with the predictions of the band anticrossing BAC model, as implemented with model parameters derived from tight-binding calculations. The tempera...

Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells

Effect of Dimension & Material Composition on Transmission Coefficient and Tunneling Current of Double Quantum Barrier Structure with Band Nonparabolicity

-Transmission coefficient, eigen states and tunneling current density of a potentially symmetric quantum double barrier structure has been numerically computed using transfer matrix technique for qualitative analysis of resonant tunneling probability when realistic band structure of higher band gap material is taken into account. GaAs/AlxGa1-xAs material composition is taken as an example for c...